Characterization and modeling of novel large gate periphery InGaAs/ InAlAs pHEMT for ultra low noise radio astronomy applications

ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES

Investigation of high mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by hydride vapor phase epitaxy (HVPE)

LARGE-SIGNAL ANALYSIS OF IN P IMPATT DIODES WITH PROPOSED APPLICATIONS TO AIRBORNE-RADAR SYSTEMS

A 10W, 2-5 GHz Highly Linear Power Amplifier

ENHANCED PERFORMANCE OF COMPLEMENTARY GALLIUM ARSENIDE (CGAAS) CIRCUITS

LARGE-SIGNAL ANALYSIS OF GYRO-TWT WITH APPLICATIONS TO AIRBORNE EARLY-WARNING RADARS

A 3.1-10.6 GHz Hybrid Class-F Class-E Power Amplifier

THE OPTIMUM WIDTH FOR LHL-GaAs-IMPATT DIODES

A MODELING OF NEGATIVE RESISTANCE MOSFET FOR METAMATERIALS LOW LOSS OSCILLATORS FOR NANOTECHNOLOGY APPLICATIONS