Beta
ManageSearchChatDiscover
340439

Improved Model of a Gallium Nitride HEMT for High Power Application

Article

Last updated: 25 Dec 2024

OverviewSimilar Items

Subjects

-

Tags

-

Abstract

In this paper, a development of Gallium Nitride -High-Electron-Mobility Transistor (HEMT) model is presented. Static characteristics are extracted from a commercial device data sheet and fitted into empirical functions using MATLAB software package. The stability performance of GaN devices is important to work in most of applications. The equivalent circuit model is tested in a simple configuration for plotting I-V curve through estimating parameters of the gate to drain capacitance (CGD) and drain to source capacitance (CDS). These parasitic capacitances are essential to provide a comprehensive understanding of the switching behavior of the device as well as critical parameters to enhance model static current-voltage characteristics .A stable performance of I-V curve has been achieved when using the proposed improved model equations of those capacitances. The obtained results show that the proposed model of Gallium Nitride -HEMT is favorable for use in high frequency, high efficiency, and high power density power conversion applications.

DOI

10.21608/jaet.2022.144591.1194

Keywords

GaN, modeling, capacitance

Authors

First Name

Gamal

Last Name

Dousoky

MiddleName

Mahmoud

Affiliation

Electrical Engineering Department, Faculty of Engineering, Minia University, Minia 61517, Egypt

Email

dousoky@mu.edu.eg

City

minia

Orcid

0000-0002-4737-4259

First Name

fatma

Last Name

Ali

MiddleName

mohamed

Affiliation

Department of Electrical Engineering, Faculty of Engineering, Minia University, Minia , Egypt.

Email

eng.fatima2012@gmail.com

City

minia

Orcid

-

First Name

Mahmoud

Last Name

abdelghany

MiddleName

ahmed

Affiliation

Department of Electronics & Communications Engineering, Faculty of Engineering, Minia University, Minia, Egypt. Electrical Engineering Department, College of Engineering, Prince Sattam Bin Abdulaziz University, Wadi Addwasir 11991,

Email

abdelghany@mu.edu.eg

City

minia

Orcid

-

First Name

mohamed

Last Name

Abouelatta

MiddleName

-

Affiliation

Department of Electronics and Communications Engineering, Faculty of Engineering, Ain Shams University, Egypt

Email

m.abouelatta@eng.asu.edu.eg

City

cairo

Orcid

-

First Name

Masahito

Last Name

Shoyama

MiddleName

-

Affiliation

3Department of Electrical Engineering, Faculty of Information Science and Electrical Engineering, Kyushu University, Japan

Email

shoyama@ees.kyushu-u.ac.jp

City

-

Orcid

-

Volume

43

Article Issue

1

Related Issue

46001

Issue Date

2024-01-01

Receive Date

2022-06-14

Publish Date

2024-01-01

Page Start

27

Page End

32

Print ISSN

2682-2091

Online ISSN

2812-5487

Article File

JAET_Volume 43_Issue 1_Pages 27-32.pdf

PDF . 802.2kB

Link

https://jaet.journals.ekb.eg/article_340439.html

Detail API

https://jaet.journals.ekb.eg/service?article_code=340439

Order

340,439

Type

Original Article

Type Code

1,142

Publication Type

Journal

Publication Title

Journal of Advanced Engineering Trends

Publication Link

https://jaet.journals.ekb.eg/

MainTitle

Improved Model of a Gallium Nitride HEMT for High Power Application

Details

Type

Article

Created At

25 Dec 2024