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33285

ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES

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Last updated: 04 Jan 2025

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Abstract

Abstract:
Gunn oscillation can occur via the transferred electron effect or the negative differential
mass effect. We have mathematically formulated the frequency response of a Gunn
diode operating in the transit time mode independent of the mechanism responsible for
Gunn oscillation in bulk semiconductors. Domain growth dynamics with space and
time, variation of domain velocity, and frequency response have been simulated for
Gallium Nitride (GaN) by using our mathematical equations. Our simulation shows that
gallium nitride based Gunn diodes at an active length of 5 micrometer can produce
frequency around 40 GHz for DC biasing 150 V.

DOI

10.21608/iceeng.2010.33285

Keywords

Domain growth dynamics, domain velocity, frequency response, GaN-Gunn diode

Authors

First Name

Onirban

Last Name

Islam

MiddleName

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Affiliation

Md., Undergraduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.

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First Name

Galib

Last Name

Hassan

MiddleName

-

Affiliation

Md., Undergraduate student, Department of Mathematics, University of Dhaka, Dhaka-1000, Bangladesh.

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First Name

Ahsan

Last Name

Uddin

MiddleName

-

Affiliation

Md., Graduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.

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First Name

Raisul

Last Name

Islam

MiddleName

-

Affiliation

Md., Undergraduate student, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.

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Orcid

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First Name

Zahid

Last Name

Mahmood

MiddleName

H.

Affiliation

Associate Professor, Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka-1000, Bangladesh.

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Volume

7

Article Issue

7th International Conference on Electrical Engineering ICEENG 2010

Related Issue

5537

Issue Date

2010-05-01

Receive Date

2019-05-26

Publish Date

2010-05-01

Page Start

1

Page End

7

Print ISSN

2636-4433

Online ISSN

2636-4441

Article File

ICEENG_Volume 7_Issue 7th International Conference on Electrical Engineering ICEENG 2010_Pages 1-7.pdf

PDF . 301.5kB

Link

https://iceeng.journals.ekb.eg/article_33285.html

Detail API

https://iceeng.journals.ekb.eg/service?article_code=33285

Order

114

Type

Original Article

Type Code

833

Publication Type

Journal

Publication Title

The International Conference on Electrical Engineering

Publication Link

https://iceeng.journals.ekb.eg/

MainTitle

ANALYTICAL MODEL FOR FREQUENCY RESPONSE OF A GUNN DIODE IN TRANSIT TIME MODEAND APPLICATION FOR GALLIUM NITRIDE BASED DIODES

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Article

Created At

22 Jan 2023