Abstract:
Novel high breakdown 1 μm strained gate InGaAs-InAlAs-InP pHEMTs with different
gate periphery have been fabricated. Their DC, RF, and noise performances have been
successfully characterized for investigating the optimum gate area for the best noise
performance in the L-band. Extensive experimental device characterization together
with numerical simulations using suitable linear and non-linear transistor models has
been carried out for the new devices. Excellent agreements with experimental data were
found on different transistor processes. DC, RF, and noise behaviours of the new
devices were successfully modeled.