Composition Dependence of the Grain size, Activation Energy and Coordination Number in Ge40-xInxSe60 (10 ≤ x ≤ 40 at.%) Thin Films - Egyptian Knowledge Bank - troweb

149052

Composition Dependence of the Grain size, Activation Energy and Coordination Number in Ge40-xInxSe60 (10 ≤ x ≤ 40 at.%) Thin Films

Article

Last updated: 05 Jan 2025

Overview Similar Items

Article

Composition Dependence of Optical Constants of Ge1-xSe2Pbx Thin Films

Article

Effect of Composition and Annealing on Some of the Optical Parameters of Gex Te100-x Thin Films

Article

Optical and Electrical Properties of the Ge10 Inx Se(90-x) Amorphous Thin Film

Article

Structural Properties of GexSe1-x Thin Films Prepared by Semi-closed Space Technique

Article

Optical Characterization of Ge30-xSbxTe10Se60(0 ≤ x ≤ 20) Thin Films for Optoelectronics

Article

Influence of Composition on Optical Constants and dc Conductivity of Se52In48-xPbx Thin Films

Article

DC ELECTRICAL CONDUCTIIVITY OF THE SYSTEM (Ge Se2.5)1-x (Ge Te2.5)x IN THE GLASSY STATE

Article

Photocrydtallization and Optical Properties od Amorphous Se87.5 Sb12.5 Thin Films

Article

A.C. Conductivity and Dielectric Behaviour of Chalcogenide Gex Fex Se100-2x Thin Films

Article

Effect of Ag Content on the Optical Properties of a- Ge15 Se85-x Agx Alloys