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150462

A.C. Conductivity and Dielectric Behaviour of Chalcogenide Gex Fex Se100-2x Thin Films

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Last updated: 23 Jan 2023

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Abstract

Thin chalcogenide films of GexFex Se100-2x (x= 2.5,5,10 and 15 at.%) with
thickness about ≈ 300 nm, have been prepared by thermal evaporation
technique. A.C. conductivity σa.c. (ω) of the prepared thin films has been
measured in the frequency range (0.1-20 K Hz), over the temperature
range(300-345 K).Obtained data reveal that σa.c. (ω) obey the relation, σa.c.
(ω)= Aωs ,and the exponent, s, was found to decrease by increasing
temperature. The values of, s, of the investigated thin films lie between 0.4 to
0.9. The data were analyzed in terms of different models of a.c. conduction. It
was found that, the correlated barrier hopping (C.B.H.) is the dominant
conduction mechanism. The dependence of dielectric constant έ and loss factor
(tan δ) on both frequency and temperature has been also treated.

DOI

10.21608/ejs.2002.150462

Volume

25

Article Issue

1

Related Issue

22139

Issue Date

2002-12-01

Receive Date

2001-06-21

Publish Date

2002-12-01

Page Start

49

Page End

56

Print ISSN

1012-5566

Online ISSN

2735-5640

Link

https://ejs.journals.ekb.eg/article_150462.html

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https://ejs.journals.ekb.eg/service?article_code=150462

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Journal

Publication Title

Egyptian Journal of Solids

Publication Link

https://ejs.journals.ekb.eg/

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Created At

23 Jan 2023