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62518

DESIGN,IMPLEMENTATION AND VERIFICATION OF C-BAND GAAS MESFET OSCILLATOR

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Last updated: 24 Dec 2024

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Abstract

In this paper, the Gain Saturation Approximation method is used for the design of a 4.5 GHz GaAs MESFET Oscillator. This method is based on S-Parameter simulation of the initial oscillator topology including the transistor model. A computer-aided-design was employed for optimizing and simulating the designed circuit to obtain the conditions of oscillation. To verify this work, the optimized circuit is fabricated, by using microstrip technology, and measured. The optimized circuit is also simulated using MDS program. Good agreement between simulation and measurement is obtained.

DOI

10.21608/iceeng.1999.62518

Keywords

microwave, Microstrip, Oscillator, CAD, and C-band

Authors

First Name

ABDALLA

Last Name

I.

MiddleName

M.

Affiliation

Associate Professor, Comm. Department, Zagazig University, Zagazig, Egypt.

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First Name

MOSELHY

Last Name

M.

MiddleName

A.

Affiliation

Ph. D., Comm. Department, Zagazig University, Zagazig, Egypt.

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First Name

ABDEL-NAZEER

Last Name

A.

MiddleName

-

Affiliation

Ph. D., Armed Forces, Egypt.

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First Name

MAGHAWRY

Last Name

M.

MiddleName

-

Affiliation

Graduate student, Armed Forces, Egypt.

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Volume

2

Article Issue

2nd International Conference on Electrical Engineering ICEENG 1999

Related Issue

9420

Issue Date

1999-11-01

Receive Date

2019-11-28

Publish Date

1999-11-01

Page Start

346

Page End

355

Print ISSN

2636-4433

Online ISSN

2636-4441

Link

https://iceeng.journals.ekb.eg/article_62518.html

Detail API

https://iceeng.journals.ekb.eg/service?article_code=62518

Order

36

Type

Original Article

Type Code

833

Publication Type

Journal

Publication Title

The International Conference on Electrical Engineering

Publication Link

https://iceeng.journals.ekb.eg/

MainTitle

DESIGN,IMPLEMENTATION AND VERIFICATION OF C-BAND GAAS MESFET OSCILLATOR

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Article

Created At

22 Jan 2023