Power semiconductor devices have a great impact on the modern society electronic system applications. The study aims to improve the switching performance of power MOSFET devices based on materials with different bandgap structures and technologies. In this concern, the static electrical characteristics of three power MOSFET devices made of Silicon (Si-MTP20N15E; Eg = 1.12 eV), Silicon Carbide (SiC-TW107N65C; Eg = 3.25 eV) and Gallium Nitride (GaN-TPH3208PS-ND; Eg = 3.44 eV), operating at the enhancement mode were tested. Moreover, the design and implementation of their switching circuits were investigated at frequency of 1.0 kHz. In addition, the influence of their materials on the switching times was studied.  From which, it is  noted that, GaN MOSFET  has the fastest switching ON/OFF times (0.3µs /0.34µs), rather than SiC and Si. Where, their switching ON/OFF times were reported to be (0.37µs /0.52µs and 0.76µs /0.8µs), respectively. These findings underscore the potential of wide bandgap materials in enhancing the performance of power electronic devices.