This research is focused on the effect of nickel doping ratio on γ-ray attenuation radiological parameters for five compounds owning chemical compositions BaMn1-xNixO3 (x=0.1,0.3,0.5,0, and 0.9), named Ni1, Ni3, Ni5, Ni7, and Ni9, using Phy-X/PSD software within 0.015-15 MeV energy range. The photon interaction parameters (MAC, LAC, HVL, TVL, MFP, ACS, ECS, Zeff, Neff, Ceff, Zeq, EBF, and EABF) were graphically depicted. Most of the parameters depend profoundly on photon energy. For instance, MAC reduces from 137 to 0.133, and LAC increases from 775.7 to 0.75 cm with increasing Eph (0.015 -15 MeV). In addition, HVL and TVL increase from 0.0009 to 0.9 and from 0.003 to 3 respectively in between that energy range. Also, MFP increases from 0.001 to 1.3 but Neff, Ceff , ACS, ECS, and Zeff decrease from 4×1024-2×1024, 1.6×1010-0.7×1010, 100×10-24-1×10-24, 3.3×10-23 - 0.007×10-23 and 32 -15 at energy 0.015-15 MeV. Furthermore, Zeq value is 19.3. Moreover, exposure and energy absorption buildup factors (EBF and EABF) are calculated at different penetration depths (1- 40 mfp) to be 1-1.2, 2.7-29, 1.3-1.7, and 3.15-22. These values independent of Eph at low mfp but at 40 mfp are changed from 3-29. Maximum buildup parameters site in middle energy range, 0.2-1MeV. In another side, Most of such parameters depend on the Ni dopants. FNRCS values are 0.85. The present samples exhibit greater radiological properties than that published previously. These investigations are critical for the development of utilized semiconductor as detectors, attenuators, and protection radiation in various radiation safety applications fields.