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357510

Nonlinear optical properties of semiconductor materials by the Z-scan technique: review article

Article

Last updated: 21 Dec 2024

Subjects

-

Tags

Nonlinear optics

Abstract

The nonlinear optical (NLO) properties of semiconductor nanomaterials have a significant role in opto-electronic devices. In this review, recent results on the NLO of semiconductor materials (including zinc sulphide, Indium Oxide, birnessite-type manganese oxide, GaAs doped with Bismuth and ZnO doped with transition metals) have been discussed. Z-scan has been used to study the nonlinear optical properties of these materials. The NLO properties and the optical limiting for different laser sources either pulsed or continuous are studied experimentally.

DOI

10.21608/lira.2024.357510

Keywords

Nonlinear Optics, semiconductor, opto-electronic, Z-scan

Authors

First Name

Shaimaa

Last Name

Mohamed

MiddleName

-

Affiliation

Laser Institute for Research and Applications (LIRA), Beni-Suef University, Beni-Suef 62511, Egypt

Email

-

City

-

Orcid

-

First Name

Tarek

Last Name

Mohamed

MiddleName

-

Affiliation

Laser Institute for Research and Applications (LIRA), Beni-Suef University, Beni-Suef 62511, Egypt

Email

tarek_mohamed1969@lira.bsu.edu.eg

City

-

Orcid

-

Volume

1

Article Issue

2

Related Issue

48270

Issue Date

2024-06-01

Receive Date

2024-06-01

Publish Date

2024-06-01

Page Start

67

Page End

84

Print ISSN

3009-6359

Online ISSN

3009-6472

Link

https://lira.journals.ekb.eg/article_357510.html

Detail API

https://lira.journals.ekb.eg/service?article_code=357510

Order

357,510

Type

Review article

Type Code

3,101

Publication Type

Journal

Publication Title

Laser Innovations for Research and Applications

Publication Link

https://lira.journals.ekb.eg/

MainTitle

Nonlinear optical properties of semiconductor materials by the Z-scan technique: review article

Details

Type

Article

Created At

21 Dec 2024