In the current study, a series of BaZrxTi1-xO3 (BZT) was synthesized by tartrate precursor method, with (x = 0.00, 0.15, 0.50, 0.75, and1) that were then calcined and sintered for four hours at 1100°C. In order to describe the structural characteristics of prepared samples, X-ray Diffraction (XRD) is used. From the XRD pattern, the tetragonal phase was confirmed. Dielectric loss (Tanδ) and the real and imaginary parts of the dielectric constant (ε^',ε^'') were analyzed for their frequency dependency. The results show that at low frequencies, the values of ε^',ε^'' and tanδ have high values and rapidly decline with an increase in frequency. So BZT materials could have potential applications in the development of high-performance capacitors, resonators, filters, and sensors. The Nyquist plot shows two semicircles; the first one at higher frequency shows grain contribution and that at low frequency is grain boundary contribution. The decrease in a.c. resistivity with increasing temperature is observed at high temperature region indicating that the mobility of charge carriers are thermally activated which lead to the decrease of resistivity, so these materials may be suitable for high-temperature applications such as power electronics and electrical insulation. The sample x = 0.75 has high dielectric loss compared with other samples that assured by the a.c. resistivity whereas the sample x = 0.75 has the lowest resistivity.