Thin-films of CdS doped with various ZnS contents have been deposited using thermal evaporation technique. The thermal and electrical properties of the deposited films have been studied. The DC electrical conductivity of (CdS)1-x(ZnS)x thin films were calculated from the resistance measurements using two-probe method. It was found that the Seebeck coefficient (S) of (CdS)1-x(ZnS)x thin films measured at room temperature has a negative sign indicating that (CdS)1-x(ZnS)x thin films were n-type semiconductors for different ZnS contents. The values of S found to increase with increasing ZnS content. Also, the conductivity decreased from 1646 (Ω.cm)-1 to 818 (Ω.cm)-1 with increasing ZnS content from x=0 to 0.5, respectively. Some important parameters such as the mean free bath, carrier concentration, carrier mobility, diffusion coefficient, Fermi energy and effective mass were calculated from the thermal and electrical measurements.