QUANTUM EFFICIENCY OF AN INVERSION LAYER SILICON PHOTODIODE IN THE NEAR ULTRAVIOLET - Egyptian Knowledge Bank

151908

QUANTUM EFFICIENCY OF AN INVERSION LAYER SILICON PHOTODIODE IN THE NEAR ULTRAVIOLET

Article

Last updated: 05 Jan 2025

Overview Similar Items

Subjects

DOI

10.21608/ejs.1993.151908

Volume

Article Issue

Related Issue

22409

Issue Date

1993-02-01

Receive Date

2021-02-25

Publish Date

1993-02-01

Page Start

Page End

Print ISSN

1012-5566

Online ISSN

2735-5640

Article File

EJS_Volume 16_Issue 1_Pages 23-30.pdf

PDF . 416.3kB

Link

https://ejs.journals.ekb.eg/article_151908.html

Detail API

https://ejs.journals.ekb.eg/service?article_code=151908

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Publication Type

Journal

Publication Title

Egyptian Journal of Solids

Publication Link

https://ejs.journals.ekb.eg/

MainTitle