The structural problem of oxygen diffusion into the ZnSe lattice
annealed in air at different temperatures was studied. Different possible sites
were tried for oxygen accommodation. It is found that oxygen atoms diffuse
into the vacant sites of the Se atoms formed due to Se evaporation. The relative
occupancy of the diffused oxygen was determined as a function of annealing
temperature. ZnSeO3 and ZnO phases start to develop at a temperature of 623
K and a period of 30 hours annealing time.