Photoconductivity studies were carried out on Ga2Se single crystals
prepared from melt. The effect of light intensity, applied voltage and side
illumination on the AC Photoconductivity was studied. Also the spectral
distribution of the DC Photoconductivity was investigated. Lifetime relations of
the charge carriers were discussed. The forbidden energy gap at room
temperature, for this crystal, was also calculated and found to be 0.49 eV