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149056

Transport Properties of Ga0.45In0.55Sb

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Last updated: 05 Jan 2025

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Abstract

The thermoelectric power and Hall measurement carried out on the asprepared sample of Ga0.45 In0.55 Sb confirmed that the sample is n-type semiconductor. The existence of two minima at 3.5 and 4.8 Vcm-1 on the σ - E characteristic reflects the occurrence of the Gunn effect. A metallic like behavior of the sample is observed and interpreted. The effect of the magnetic field on the concentration of the electrons is apparent

DOI

10.21608/ejs.2007.149056

Volume

30

Article Issue

1

Related Issue

21919

Issue Date

2007-12-01

Receive Date

2006-07-16

Publish Date

2007-12-01

Page Start

31

Page End

46

Print ISSN

1012-5566

Online ISSN

2735-5640

Article File

EJS_Volume 30_Issue 1_Pages 31-46.pdf

PDF . 1.6MB

Link

https://ejs.journals.ekb.eg/article_149056.html

Detail API

https://ejs.journals.ekb.eg/service?article_code=149056

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4

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Original Article

Type Code

1,717

Publication Type

Journal

Publication Title

Egyptian Journal of Solids

Publication Link

https://ejs.journals.ekb.eg/

MainTitle

Transport Properties of Ga0.45In0.55Sb

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Article

Created At

23 Jan 2023