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148866

Transport Properties of Ge1-xMnxSe System

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Last updated: 05 Jan 2025

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Abstract

Study of the ac and dc conductivities of semimagnetic semiconductor
Ge1-xMnxSe (x = 0.1 and 0.2) has been carried out. The activation energy and
the pre-exponential factor which appear in the dc conductivity are found to
decrease with increasing Mn. The dielectric response and ac conductivity of the
samples are investigated in the frequency range from 50 Hz to 5 MHz and
temperature range from 300 to 420 K. The obtained data reveal that sac(w)
obey the relation sac(w) = A ws, and the exponent s was found to be » 1. The
analysis of results shows that the dominant conduction mechanism follows the
quantum mechanical tunneling (QMT). The ESR spectra showed that the
investigated samples are paramagnetic materials at room temperature. The
calculated number of defects illustrates that with increasing Mn the number of
defects increases. The magnetic properties are determined by the measurement
of magnetization as a function of magnetic field. The results indicated the
paramagnetic behavior for x = 0.1. While as x increased to 0.2 the results
indicated the ferromagnetic exchange interaction between the magnetic ions.
Keywords: Transport Properties, Magnetic Properties and Semimagnetic
Semiconductors.

DOI

10.21608/ejs.2011.148866

Volume

34

Article Issue

1

Related Issue

21881

Issue Date

2011-12-01

Receive Date

2010-06-16

Publish Date

2011-12-01

Page Start

137

Page End

151

Print ISSN

1012-5566

Online ISSN

2735-5640

Link

https://ejs.journals.ekb.eg/article_148866.html

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https://ejs.journals.ekb.eg/service?article_code=148866

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11

Publication Type

Journal

Publication Title

Egyptian Journal of Solids

Publication Link

https://ejs.journals.ekb.eg/

MainTitle

Transport Properties of Ge1-xMnxSe System

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Type

Article

Created At

23 Jan 2023