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198860

A Novel 4-Neuron Hopfield an Using Set Technology.

Article

Last updated: 22 Jan 2023

Subjects

-

Tags

Electronics and Communications Engineering

Abstract

Single Electron Tunneling (SET) technology introduces more potential for feature size reduction compared with well-established silicon-based CMOS technology. The SET technology offers the ability to control the motion of individual electrons in the designed circuits, In this paper some of the basic Single Electron Circuits (SECs) found in the literature, are reviewed. The complete schematic diagrams of these basic SECs (inc. parameters for used devices) along with the corresponding simulation results (using the famous Monte Carlo simulator; SIMON 2.0) of these SEC are included. Finally, a novel 4-neuronHopfield ANN SEC is introduced. The full design (inc. detailed schematic diagram) and its Simon 2 simulation results are included.

DOI

10.21608/bfemu.2006.198860

Keywords

Single Electron Tunneling (SET), Single Electron Box (SEB), Single Electron Circuits (SEC), Boolean Logic, Linear Threshold Gate (ITG), Artificial Neural network (ANN), Hopfield ANN

Authors

First Name

Sameh

Last Name

Rehan

MiddleName

Ebrahim

Affiliation

Assistant Professor and IEEE Member., Communications and Electronics Engineering Department., Faculty of Engineering., El-Mansoura University., Mansoura., Egypt 35516

Email

sameh_rehan@ieee.org

City

Mansoura

Orcid

-

Volume

31

Article Issue

4

Related Issue

19225

Issue Date

2006-12-01

Receive Date

2021-10-10

Publish Date

2006-10-10

Page Start

46

Page End

52

Print ISSN

1110-0923

Online ISSN

2735-4202

Link

https://bfemu.journals.ekb.eg/article_198860.html

Detail API

https://bfemu.journals.ekb.eg/service?article_code=198860

Order

9

Type

Research Studies

Type Code

1,205

Publication Type

Journal

Publication Title

MEJ. Mansoura Engineering Journal

Publication Link

https://bfemu.journals.ekb.eg/

MainTitle

-

Details

Type

Article

Created At

22 Jan 2023