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198684

A Novel XOR Gate Using Single Electron Tunneling Technology.

Article

Last updated: 22 Jan 2023

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Subjects

-

Tags

Electronics and Communications Engineering

Abstract

Single Electron Tunneling (SET) technology introduces more potential for feature size reduction compared with well-established silicon-based CMOS technology. The SET technology offers the ability to control the motion of individual electrons in the designed circuits, In this paper some of the basic Single Electron Circuits (SEC) found in the literature is reviewed, The complete schematic diagrams of these basic SEC (inc parameters for used devices) along with the corresponding simulation results (using SIMON 2.0) of these SEC are included. Finally, a novel XOR SEC, with detailed schematic and simulation results, is presented The developed XOR SEC can be used as a half-adder SEC.

DOI

10.21608/bfemu.2021.198684

Keywords

Single Electron, SET, Single Electron Box (SEB), Single Electron Circuits (Sec0, Boolean Logic, Linear Thershold Gate (LTG), XOR

Authors

First Name

Sameh

Last Name

Rehan

MiddleName

-

Affiliation

Assistant Professor., Communications and Electronics Engineering Department Faculty of Engineering., Mansoura University., Mansoura., Egypt 35516

Email

sameh_rehan@ieee.org

City

Mansoura

Orcid

-

Volume

31

Article Issue

4

Related Issue

19225

Issue Date

2006-12-01

Receive Date

2006-10-09

Publish Date

2021-10-10

Page Start

1

Page End

8

Print ISSN

1110-0923

Online ISSN

2735-4202

Article File

BFEMU_Volume 31_Issue 4_Pages 1-8.pdf

PDF . 976.8kB

Link

https://bfemu.journals.ekb.eg/article_198684.html

Detail API

https://bfemu.journals.ekb.eg/service?article_code=198684

Order

4

Type

Research Studies

Type Code

1,205

Publication Type

Journal

Publication Title

MEJ. Mansoura Engineering Journal

Publication Link

https://bfemu.journals.ekb.eg/

MainTitle

-

Details

Type

Article

Created At

22 Jan 2023