Fabrication, electrical investigation, and photovoltaic investigations of Au/In2Se3/p-Si/Al diode using thermal evaporation approach
The heterojunction of Au/In2Se3/p-type silicon (p-Si)/Al was manufactured in this study by the deposition of the In2Se3 layer on p-Si wafers using the thermal evaporation process. The heterojunction's dark current-voltage characteristics were measured throughout a temperature range of 308 to 398 K. The characteristics and conduction mechanisms of heterojunction diodes have been investigated. The major electrical properties of the examined device were extracted via current-voltage measurements. At the targeted temperature range, the space charge-limited conduction mechanism was investigated, and thorough information about the conduction mechanism was obtained. Current-voltage characteristics and power-law dependence were discovered to be dictated by space charge-limited currents and temperature dependence. The extracted series and shunt resistances decreased as the temperature rose, indicating that the device's properties improved as the temperature rose. The manufactured films' and junction diode's measured properties indicate that they can be used as photodetectors and photovoltaic applications.