Nowadays, surface nanostructures has become an important technological method that plays an important role in the electronic devices, as it has a very remarkable feature is that they are used in etching without using chemicals. Recently, the plasma expansion model was used to describe what happens in the creation of surface nanostructures in materials. In this paper, another model to describe the creation of surface materials like SiO2 has been introduced, using a test charge approach. The basic equations describe the SiO2 are reduced to one evolution equation characterize the wakefield electric potential of a moving test charged particle. The profile of the wakefield potential is examined with different plasma parameters. It has been found that the wakefield potential decreases for different values of negative and positive ions densities. Also, we deduced that the fast test charge creates high wakefield potential behind it. Thus, they drag more charges to follow it to create the surface nanostructure.