Field experiments were carried out to investigate the effect of silicon (500 and 1000 ppm SiO₂)  or Putrescine (1 and 2 ppm) sprayed twice at 45 and 60 days after planting  on the  growth, yield and chemical composition of the two local cultivars of globe artichoke plant in Egypt i.e., Balady and French (Hyrious) cultivars. Generally, French (Hyrious) cultivar which sprayed by silicon (1000 ppm SiO₂) was the best treatment on growth characters and yield components and recorded the highest values of early and total yield increases in the two successive seasons when compared with non- sprayed plants, followed by French (Hyrious) cultivar sprayed by putrescine (1 ppm). French cultivar sprayed by silicon (1000 ppm SiO₂) was the best for significant increased in P concentration of leaves and it was the best interaction treatment led to increase on total sugar concentration in the tow successive seasons when compared with control- untreated plants followed by French cultivar sprayed by putrescine (2 ppm). While, French cultivar sprayed by putrescine (2 ppm) followed French cultivar with sprayed by silicon (1000 ppm SiO2) were the best treatments which caused significant increased in total free amino acids in the two successive seasons. But French cultivar sprayed by putrescine at the rate of (1ppm) was the best caused a significant decreased in total soluble phenol when compared with control plants of both successive seasons followed by French cultivar sprayed by silicon (1000 ppm SiO₂).The higher level of silicon caused a significant increased in IAA and CK while, the lower level led to significant increased in GA₃ and CK.