Abstract:
A series of InGaN/GaN MQW LEDs were prepared by low pressure metalorganic
chemical vapor deposition (MOCVD) and studied on the nano-structural features
correlated with optical properties, and luminescence emission mechanisms by analytical
techniques of photoluminescence (PL), PL excitation (PLE), time resolved PL (TRPL),
high-resolution (HR) X-ray diffraction (XRD) and HR transmission electron
microscopy (TEM). They have shown the excellent optical and structural properties,
evidenced by HRXRD, HRTEM and optical measurements. The quantum dot like
structure features, unique T-behaviors of PL spectra, quantum confined Stokes effect,
TRPL exploration with the variation of detecting energy and temperature and modeling
analyses are studied and discussed.