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34314

Compact model for undoped symmetric double gate comprising quantization effect

Article

Last updated: 04 Jan 2025

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Abstract

Abstract:
In this paper we propose an analytical modification for Hu's model which is an
analytical model for undoped symmetric double gate MOSFETs. This modification
targets to include the energy states quantization effect on the drain current. This leads to
correct the model behavior for ultra thin double gate. Moreover, we introduce a simple
method to include the velocity saturation effect in the current equation. Comparison
with device simulator results is finally presented to validate the proposed modifications.

DOI

10.21608/iceeng.2008.34314

Keywords

double gate MOSFETS, compact models, quantization effect, velocity saturation

Authors

First Name

Ahmed

Last Name

Abo-Elhadeed

MiddleName

-

Affiliation

Mentor Graphics.

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First Name

Tarek

Last Name

Abdolkader

MiddleName

-

Affiliation

Higher Institute of Technology, Benha University.

Email

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Orcid

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First Name

Wael

Last Name

Fikry

MiddleName

-

Affiliation

Ain Shams University.

Email

-

City

-

Orcid

-

First Name

Hani

Last Name

Ragaie

MiddleName

-

Affiliation

French University in Egypt.

Email

-

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Volume

6

Article Issue

6th International Conference on Electrical Engineering ICEENG 2008

Related Issue

5700

Issue Date

2008-05-01

Receive Date

2019-06-11

Publish Date

2008-05-01

Page Start

1

Page End

10

Print ISSN

2636-4433

Online ISSN

2636-4441

Link

https://iceeng.journals.ekb.eg/article_34314.html

Detail API

https://iceeng.journals.ekb.eg/service?article_code=34314

Order

74

Type

Original Article

Type Code

833

Publication Type

Journal

Publication Title

The International Conference on Electrical Engineering

Publication Link

https://iceeng.journals.ekb.eg/

MainTitle

Compact model for undoped symmetric double gate comprising quantization effect

Details

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Article

Created At

22 Jan 2023