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34313

A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure

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Last updated: 04 Jan 2025

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Abstract

Abstract:
In this paper, we have proposed a novel Silicon-On-Insulator (SOI) power MOSFET
structure .This structure is a combination of two sub structures: a buried oxide step
(BOS) and a buried oxide double step (BODS) that named asymmetrical buried oxide
double step (ABODS). Using two-dimensional simulation, we have investigated the
improvement in device performance focusing on the breakdown voltage. The ABODS
structure exhibits a high breakdown voltage respected to other SOI structures at a much
higher impurity concentration that can causes lower on-resistance (RON).

DOI

10.21608/iceeng.2008.34313

Keywords

Silicon-on-insulator (SOI), Power MOSFET, Breakdown Voltage, Buried Oxide Double Step Structure

Authors

First Name

Ali

Last Name

Orouji

MiddleName

A.

Affiliation

Electrical Engineering Department, Semnan University, Semnan, IRAN.

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Orcid

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First Name

Samaneh

Last Name

Sharbati

MiddleName

-

Affiliation

Electrical Engineering Department, Semnan University, Semnan, IRAN.

Email

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City

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Orcid

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First Name

Morteza

Last Name

Fathipour

MiddleName

-

Affiliation

Electrical Engineering Department, Tehran University, Tehran, IRAN.

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Volume

6

Article Issue

6th International Conference on Electrical Engineering ICEENG 2008

Related Issue

5700

Issue Date

2008-05-01

Receive Date

2019-06-11

Publish Date

2008-05-01

Page Start

1

Page End

7

Print ISSN

2636-4433

Online ISSN

2636-4441

Article File

ICEENG_Volume 6_Issue 6th International Conference on Electrical Engineering ICEENG 2008_Pages 1-7.pdf

PDF . 161.4kB

Link

https://iceeng.journals.ekb.eg/article_34313.html

Detail API

https://iceeng.journals.ekb.eg/service?article_code=34313

Order

73

Type

Original Article

Type Code

833

Publication Type

Journal

Publication Title

The International Conference on Electrical Engineering

Publication Link

https://iceeng.journals.ekb.eg/

MainTitle

A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure

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Article

Created At

22 Jan 2023