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34312

Power minimization in CMOS RF mixers

Article

Last updated: 04 Jan 2025

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Abstract

Abstract:
A new very low power RF mixer is introduced. The proposed mixer is based on two
techniques: A CMOS transistor pair is applied to the four cross-coupled
commutating transistor (the first technique), and current boosted technique, as
described in the paper. The CMOS mixer is simulated in 0.8 μm CMOS technology.
The mixer has an input signal of 0.2V and operates on a single 2.5V supply with
transistor threshold voltages of 0.57V for all NMOS transistors and -0.52V for all
PMOS transistors, and has a power dissipation of 2.3 mW.

DOI

10.21608/iceeng.2008.34312

Keywords

CMOS, RF, mixer, low power, current-boosted

Authors

First Name

Ahmed

Last Name

ElDeib

MiddleName

-

Affiliation

Senior Member, IEEE., Modern Academy, Cairo, EGYPT.

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Orcid

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First Name

Roshdy

Last Name

AbdelRassoul

MiddleName

A.

Affiliation

Senior Member, IEEE., Arab Academy for Science, Technology & Maritime Transport, Alexandria, EGYPT, 21937.

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Orcid

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Volume

6

Article Issue

6th International Conference on Electrical Engineering ICEENG 2008

Related Issue

5700

Issue Date

2008-05-01

Receive Date

2019-06-11

Publish Date

2008-05-01

Page Start

1

Page End

12

Print ISSN

2636-4433

Online ISSN

2636-4441

Link

https://iceeng.journals.ekb.eg/article_34312.html

Detail API

https://iceeng.journals.ekb.eg/service?article_code=34312

Order

72

Type

Original Article

Type Code

833

Publication Type

Journal

Publication Title

The International Conference on Electrical Engineering

Publication Link

https://iceeng.journals.ekb.eg/

MainTitle

Power minimization in CMOS RF mixers

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Article

Created At

22 Jan 2023