ABSTRACT
One of the deficiencies of many MOSFET models is that they are regional and can have
discontinuities at the boundaries between regimes. This causes problems for deriving the
conductance in circuit simulation.
In this paper, a physical one-dimensional MOSFET model is developed. Discontinuities
between linear and saturation regimes are avoided using one-region closed-form equation for
the drain current. The strong inversion current-voltage (I-V) characteristics for submicron nchannel
MOSFET which is suitable for circuit simulation and rapid process characterization are
presented. The model is also suitable as a starting solution for two-dimensional numerical
modeling.
The resulting drain current is continuous over the entire operating range of the transistor. The
calculated drain current is in agreement with publishing data using similar approaches.