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Low Power Current-Mode Threshold Logic Gate Using Nano-Technology Double-Gate MOSFETs

Article

Last updated: 04 Jan 2025

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Abstract

Abstract:
This paper presents a new low voltage low power current mode threshold logic (CMTL)
circuits using DGMOSFETs. The ultimate feature of the double gate transistor is using
the top and bottom gates in the design of the logic circuits that reduces the number of
the transistors. The total number of the transistors required to implement the CMTL
circuits and the power dissipation is almost reduced by half by using the DGMOSFET.
OR, AND, MAJ logic gates are designed using DGMOSFETs and simulated using
HSPICE. The results for the proposed 45 nm DGMOSFET logic circuits with 1 V
supply voltage show low power dissipation, smaller power delay product and less
number of device.

DOI

10.21608/iceeng.2010.33018

Keywords

DGMOSFET Circuits, Low Power Circuits, Threshold Logic Gate

Authors

First Name

Aliaa

Last Name

Ahmed

MiddleName

Salah

Affiliation

Electrical Engineering Depart., Faculty of Engineering.

Email

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City

-

Orcid

-

First Name

Hesham

Last Name

Hamed

MiddleName

F. A.

Affiliation

Electrical Engineering Depart., Faculty of Engineering.

Email

-

City

-

Orcid

-

First Name

El-sied

Last Name

Hasaneen

MiddleName

A. M.

Affiliation

Electrical Engineering Depart., Faculty of Engineering.

Email

-

City

-

Orcid

-

Volume

7

Article Issue

7th International Conference on Electrical Engineering ICEENG 2010

Related Issue

5537

Issue Date

2010-05-01

Receive Date

2019-05-23

Publish Date

2010-05-01

Page Start

1

Page End

10

Print ISSN

2636-4433

Online ISSN

2636-4441

Link

https://iceeng.journals.ekb.eg/article_33018.html

Detail API

https://iceeng.journals.ekb.eg/service?article_code=33018

Order

55

Type

Original Article

Type Code

833

Publication Type

Journal

Publication Title

The International Conference on Electrical Engineering

Publication Link

https://iceeng.journals.ekb.eg/

MainTitle

Low Power Current-Mode Threshold Logic Gate Using Nano-Technology Double-Gate MOSFETs

Details

Type

Article

Created At

22 Jan 2023