Abstract:
In this paper, we propose a 1D numerical quantum simulator for symmetric gate-allaround
nanowire transistors with cylindrical cross section within the effective mass
approximation. The simulator is based on a self consistent Schrödinger-Poisson solver,
using the finite difference method, in conjunction with a current model assuming
ballistic behavior for the transistor. The solutions obtained were first verified
analytically when it was available. Electron distribution profiles and I-V characteristics
for transistors with different device parameters are numerically evaluated using the
proposed simulator. The effects of quantum confinement and low dimensions on these
characteristics are indicated.