30669

Low voltage low power programmable logic gate based on SE-MOSFET

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Last updated: 04 Jan 2025

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Abstract

Single electron transistor (SET) is one of the most promising devices for nanoscale circuit design. In this paper, new low voltage low power programmable logic gate circuits using SE-MOSFET are presented. Devices that combine singleelectron
and metal–oxide–semiconductor (MOS) transistors allows compact realization of basic logic function that exhibit periodic transfer characteristics. The proposed SE-MOSFET logic gates are useful for implementing binary logic circuits. The proposed programmable logic gate is verified by simulating the circuit using PSPICE. The results show that the operation of proposed circuit is in accordance with the theories.

DOI

10.21608/iceeng.2012.30669

Keywords

SE-MOSFTT Hybrid Circuits, Low Power Circuits, Logic Gate

Authors

First Name

Soha

Last Name

Ahmed

MiddleName

-

Affiliation

Electrical Engineering Depart., Faculty of Engineering Minia University, El-Minia, Egypt.

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Orcid

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First Name

Hesham

Last Name

Hamed

MiddleName

F. A.

Affiliation

Electrical Engineering Depart., Faculty of Engineering Minia University, El-Minia, Egypt.

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City

-

Orcid

-

First Name

E.

Last Name

Hasaneen

MiddleName

A. M.

Affiliation

Electrical Engineering Depart., Faculty of Engineering Minia University, El-Minia, Egypt.

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-

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-

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Volume

8

Article Issue

8th International Conference on Electrical Engineering ICEENG 2012

Related Issue

5272

Issue Date

2012-05-01

Receive Date

2019-04-24

Publish Date

2012-05-01

Page Start

1

Page End

7

Print ISSN

2636-4433

Online ISSN

2636-4441

Link

https://iceeng.journals.ekb.eg/article_30669.html

Detail API

https://iceeng.journals.ekb.eg/service?article_code=30669

Order

35

Type

Original Article

Type Code

833

Publication Type

Journal

Publication Title

The International Conference on Electrical Engineering

Publication Link

https://iceeng.journals.ekb.eg/

MainTitle

Low voltage low power programmable logic gate based on SE-MOSFET

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Article

Created At

22 Jan 2023