ABSTRACT
Genuine Processing techniques have been developed to minimize density of
dislocations and other defects originating from thermal stresses present in Multi
Junction Photo Voltaic devices (MJ-PVs). Embedded Void Approach; (EVA) was
used to address the defects evolution in GaAs growth on Si substrates. In attempts
to study void effect on dislocation generation; elastic models were prepared for
voided and un-voided structures. Stresses and displacements were compared and
related to alteration in dislocation density. The models indicated that void presence
could significantly diminish defects density leading to less cracks and failures in MJPVs,
thus enabling manufacturers to utilize their wide spectrum of photon absorption.