In this work, studies of both transient phenomena, electromigration and polarization, are present. Electromigration measurements have been carried out at different temperatures on low resistivity p - type CdTe sample with two Au Schottky contacts. Comparative measurements at different T were succeeded by etching the anode contact and a thin later below after each measurement and make a new contact. Temporal conductance of the depletion layer was measured and mobility, acceptor concentrations, diffusion coefficients of the mobile ions and the activation energy of the electromigration process were extracted. Pockels effect technique has been used to study the polarization effect in high resistivity CdZnTe with Au Schottky contacts. Time dependence of Pockels effect measurements was carried out at different T. The analysis of these data revered that the energy of the deep donor level responsible for the polarization effect in the studied sample is Ec-0.8771eV, with capture cross section 8.71x10-13 cm2.