A film of DBM is deposited on a -Si single crystal to fabricate a p-DBM/n-Si (thickness ≈ 90 nm).
Researchers have explored the electrical and photoelectrical characteristics of photovoltaic cells by
analyzing current. have been studied through current analysis. Photovoltaic
cell. Electrical and photoelectrical properties have "The matter has been under investigation." by the
current density – voltage measurements at different temperatures ((J-V) characteristics)."The fabricated
cell displayed rectifying properties, with a rectification ratio." R=4043 at 1 Volt. The obtained value of
the series resistance Rs and the shunt resistance Rsh at room temperature were determined to be 750 Ω and
1700 Ω, respectively. At low voltages (V<1V), the dark forward current density is controlled by the
tunneling mechanism, while at relatively high voltage (V>1V), a space charge-limited-conduction
mechanism is observed, controlled by a single trap level. The C-V measurements indicate an abrupt
junction with a built-in voltage of 0.78V. Finally, the cell exhibited photovoltaic characteristics with an
open-circuit voltage of 780 mV, a short-circuit current of 1.2x10-6 mA, and a power conversion efficiency
of 1.48%. These parameters were estimated at room temperature under light illumination from a source
with an input power density of 20 mWatt/cm2. These parameters were estimated at room temperature
under light illumination from a source with an input power density of 20 mWatt/cm2.