Simulation of Single–Electron Transistor Circuits Using “VHDL-AMS” Model
Last updated: 25 Dec 2024
10.21608/mjeer.2010.63814
VHDL-AMS, single-electron transistor, SPICE macro-model, island, IDS-VDS characteristics
A. M.
El-Shaer
Alexandria Institute of Engineering and Technology, Alexandria, Egypt
A. A. A.
Nasser
Arad Academy for Science, Technology and Maritime Transport, Alexandria, Egypt.
N.
Hamdy
Arad Academy for Science, Technology and Maritime Transport, Alexandria, Egypt.
20
1
9634
2010-01-01
2009-09-13
2010-01-01
1
10
1687-1189
2682-3535
https://mjeer.journals.ekb.eg/article_63814.html
https://mjeer.journals.ekb.eg/service?article_code=63814
1
Original Article
1,088
Journal
Menoufia Journal of Electronic Engineering Research
https://mjeer.journals.ekb.eg/
Simulation of Single–Electron Transistor Circuits Using “VHDL-AMS” Model
Details
Type
Article
Created At
22 Jan 2023