Abstract:
In this paper, a microstrip duplexer for the third generation (3G) Universal Mobil Telecommunication
System (UMTS) is investigated. Simple microstrip coupled-lines
resonators have been used to develop the required structure. This satisfies different
constraints such as a high electrical performance level (especially, a very narrow
bandwidth, low insertion loss and a high out-of-band rejection), great compactness, low
cost and a compatibility with a standard planar integration. Simulation and optimization
processes are carried out with the aid of the Advanced Design System (ADS)
electromagnetic simulator that uses the full–wave Method of Moment (MoM) numerical
technique. Accurate results are obtained. The losses caused by both the substrate and
metallization are taken into account during the simulation process. The duplexer is
designed, simulated and implemented.